徐睿晨,王立勇,李乐,吴健鹏,张喜明

• 1:北京信息科技大学机电工程学院
• 2:中国北方车辆研究所

摘要(Abstract)：

为准确分析绝缘栅双极型晶体管（insulated gate bipolar transistor, IGBT）运行时的温升特性，提出一种基于Simulink-COMSOL的IGBT结温计算方法。在Simulink中构建三相电流-器件导通时序的动态损耗模型，将损耗结果作为空间热源导入COMSOL进行三维瞬态温度场求解。以斯达半导体的GD1400HFX170P2S模块为例构建结温仿真模型，同时搭建稳态导通实验电路模拟模块工作时的发热情况，开展温升试验，分析模块上桥臂和下桥臂单个芯片的温升规律。仿真和试验结果表明，所提仿真模型与试验结果在不同输入电流下的最大温度误差在2.7%以内，验证了该计算方法的有效性。

关键词(KeyWords)： 绝缘栅双极型晶体管(insulated gate bipolar transistor, IGBT)模块;结温计算;温升试验;有限元分析法

Abstract:

Keywords:

基金项目(Foundation):

作者(Author): 徐睿晨,王立勇,李乐,吴健鹏,张喜明

DOI: 10.16508/j.cnki.11-5866/n.2026.02.011

参考文献(References)：

• [1]CHOWDHURY S,STUM Z,LI Z D,et al. Comparison of 600 V Si,SiC and GaN power devices[J]. Materials Science Forum,2014,778-780:971-974.
• [2]吴军科，李辉，魏云鹏，等. SiC MOSFET的温度特性及结温评估研究进展[J].半导体技术，2023,48(7):541-556.WU J K,LI H,WEI Y P,et al. Research progress of temperature characteristics and junction temperature evaluation of SiC MOSFETs[J]. Semiconductor Technology,2023,48(7):541-556.(in Chinese)
• [3]JIANG X,WANG J,CHEN J J,et al. Investigation on degradation of SiC MOSFET under accelerated stress in a PFC converter[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics,2021,9(4):4299-4310.
• [4]张擎昊，郑大勇，张品佳. SiC MOSFET结温监测与控制技术综述[J].中国电机工程学报，2025,45(3):1034-1051.ZHANG Q H,ZHENG D Y,ZHANG P J. A review of junction temperature monitoring and control methods for SiC MOSFETs[J]. Proceedings of the CSEE,2025,45(3):1034-1051.(in Chinese)
• [5]胡懿格，李景丽，高盼龙.基于智能驱动器的大容量电力电子模块IGBT结温在线监测系统[J].自动化应用，2025,66(2):140-146.HU Y G,LI J L,GAO P L. IGBT junction temperature online monitoring system for large capacity power electronic modules based on intelligent drivers[J]. Automation Application,2025,66(2):140-146.(in Chinese)
• [6]YANG Y Y,ZHANG Q H,ZHANG P J. A fast IGBT junction temperature estimation approach based on on-state voltage drop[J]. IEEE Transactions on Industry Applications,2021,57(1):685-693.
• [7]DOU Y. An improved prediction model of IGBT junction temperature based on backpropagation neural network and Kalman filter[J]. Complexity,2021,2021(1):5542889.
• [8]陈宇，吴强，周宇，等.基于傅里叶级数解析热扩散角的功率模块热阻抗物理模型[J].中国电机工程学报，2022,42(2):715-727.CHEN Y,WU Q,ZHOU Y,et al. Physics-based thermal impedance model for power module by analytic Fourier series based heat spreading angle[J]. Proceedings of the CSEE,2022,42(2):715-727.(in Chinese)
• [9]IACHELLO M,DE LUCA V,PETRONE G,et al. Lumped parameter modeling for thermal characterization of high-power modules[J]. IEEE Transactions on Components,Packaging and Manufacturing Technology,2014,4(10):1613-1623.
• [10]WANG B Y,WANG L L,YANG F T,et al. Air-cooling system optimization for IGBT modules in MMC using embedded Oshaped heat pipes[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics,2021,9(4):3992-4003.
• [11]魏辉.基于全阶状态观测器的IGBT模块结温预测[D].哈尔滨：哈尔滨工业大学，2019.WEI H. Based on full-order state observer to predict junction temperature of IGBT module[D]. Harbin:Harbin Institute of Technology,2019.(in Chinese)
• [12]贺斌.基于COMSOL多物理场耦合仿真的IGBT的失效机理分析[D].哈尔滨：哈尔滨理工大学，2021.HE B. Failure mechanism analysis of IGBT based on COMSOL multi physical field coupling simulation[D]. Harbin:Harbin University of Science and Technology,2021.(in Chinese)
• [13]LIU Y L,DU M X,YIN J L,et al. A parameter self-correcting thermal network model considering IGBT module solder layer aging[J]. Microelectronics Journal,2023,134:105741.
• [14]王存乐，李志刚，李雄，等.功率IGBT模块热网络参数提取研究综述[J].电工电气，2017(10):1-6.WANG C L,LI Z G,LI X,et al. Review of research on thermal network parameters extraction of power insulated gate bipolar translator module[J]. Electrotechnics Electric,2017(10):1-6.(in Chinese)
• [15]贾英杰，肖飞，罗毅飞，等.基于场路耦合的大功率IGBT多速率电热联合仿真方法[J].电工技术学报，2020,35(9):1952-1961.JIA Y J,XIAO F,LUO Y F,et al. Multi-rate electro-thermal simulation method for high power IGBT based on field-circuit coupling[J]. Transactions of China Electrotechnical Society,2020,35(9):1952-1961.(in Chinese)
• [16]王博.基于矢量控制的光伏逆变器IGBT损耗计算[J].电气传动，2016,46(8):45-49.WANG B. Loss calculation based on vector control of PV inverter IGBT[J]. Electric Drive,2016,46(8):45-49.(in Chinese)
• [17]熊刘涛，李国丽，孙泽辉.基于热耦合分析的IGBT损耗与结温估算研究[J].电源学报，2025,23(4):306-315.XIONG L T,LI G L,SUN Z H. Estimation of IGBT loss and junction temperature based on thermal coupling analysis[J].Journal of Power Supply,2025,23(4):306-315.(in Chinese)
• [18]杨世铭，陶文铨.传热学[M]. 4版.北京：高等教育出版社，2006.YANG S M,TAO W Q. Heat transfer[M]. 4th ed. Beijing:Higher Education Press,2006.(in Chinese)
• [19]潘子升，周俊屹，余时帆，等. IGBT相变冷板的设计和数值模拟[J].半导体技术，2025,50(5):506-513.PAN Z S,ZHOU J Y,YU S F,et al. Design and numerical simulation of IGBT cooling plate with phase change[J].Semiconductor Technology,2025,50(5):506-513.(in Chinese)
• [20]GUO C D,ZHU Y X,TONG L. Junction temperature prediction for multi-chip IGBT modules based on an improved 3D thermal network model and experimental results[J]. Results in Engineering,2025,27:106072.